The effect of annealing on photoluminescence from defects in ammonothermal GaN
نویسندگان
چکیده
Ammonothermal GaN samples with the concentration of free electrons 1018 and 1019 cm?3 were annealed in a wide range temperatures (Tann = 300–1400 °C) under atmospheric N2 pressure ultra-high conditions to avoid decomposition. Photoluminescence (PL) studies reveal YL2 band maximum at 2.3 eV before annealing two new PL bands after Tann > 600 °C: OL3 2.1 RL4 1.6–1.7 eV. The ammonothermal have high concentrations complexes containing gallium vacancy (VGa), hydrogen, oxygen. first-principles calculations suggest that VGa-3Hi complex is origin band, while VGa-3ON responsible for band.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2022
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0077796